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endobj Topics Basic fabrication steps. x�3R��2�35W(�2�300P@&�ҹ 9 0 obj Transistor layout n-type (tubs may vary): Drain current characteristics vs = 1.2V linear sturation vs = o.9V vs = 0.7/ DS. endstream <> endstream u1`�6wL ���Iq����x�FV0Z4&�9Y��xNf�ś�aw`�L �/�"�Ln��d�������gz. 1 0 obj 41 0 obj

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x�3R��2�35W(�2�300P@&�ҹ endobj Fabrication services Educational services: U.S.: MOS'S EC: EuroPractice Taiwan: ac Japan: VDEC Foundry = fabrication line for hire.

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endobj <> Fabrication processes IC built on silicon substrate: some structures diffused into substrate; other structures built on top of substrate.

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endobj The fabrication of integrated circuits consists basically of the following process steps: Lithography: The process for pattern definition by applying thin uniform layer of viscous liquid (photo-resist) on the wafer surface. 11 0 obj endobj endobj �ʁt�1H��@aL*9�K?$���P�%_!�+�� �� <> These process steps are illustrated in Figure 2-5. endobj 32 0 obj endstream

HISTORY 19th Century - Solid-State Rectifiers 1907 - Application of Crystal Detector in Radio Sets 1947 - BJT Constructed by Bardeen and Brattain 1959 – Integrated Circuit Constructed by Kilby 3. Our technology We will study a generic 1 80 nm technology.

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<> 4 0 obj endobj Silicon dioxide (Si02) is insulator. stream 14 0 obj x�3R��2�35W(�2�300P@&�ҹ endobj Photolithography Mask patterns are put on wafer using photo- sensitive material: Process steps First place tubs to provide properly-doped substrate for n-type, p-type transistors: p-tub substrate p-tub, Process steps, cont'd. <> x�3R��2�35W(�2�300P@&�ҹ <> UNIVERSITY OF ENGINEERING AND MANAGEMENT IC FABRICATION PROCESS SOUDIP SINHA ROY ECE . x�3R��2�35W(�2�300P@&�ҹ x�3R��2�35W(�2�300P@&�ҹ

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Basic IC Processing (4) Page 2 ... fabrication sequence • The basic processing steps used in fabricating integrated devices will be examined in this lecture, then the use of these process steps in fabricating a diode, bipolar junction transistor or FET will be dealt with in later lectures. endobj

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/Contents 18 0 R>> endobj %PDF-1.4 endobj o������p��^�G�^*+�[l��'��@SڜX=��C��2n�I�Ļ���aB��ġ?�+��H���*��� �72��k�Tkʨ�����O.C��+-���i����D���fWkz-��Ȩ�� w��)���Z#8B��3W5%e$�|�����BB���8H����Y�tJ|M!����%��ezM���IS�8����PV�%�y��'��⻞+��L1� Fabrication processes IC built on silicon substrate: some structures diffused into substrate; other structures built on top of substrate.

stream Use enough to create low-voltage connection. stream endstream When powered up, SCRs can turn on, creating low-resistance path from power to ground. For each approved PPT you will get 25 Credit Points and 25 Activity Score which will increase your profile visibility. endstream 39 0 obj x�3R��2�35W(�2�300P@&�ҹ endstream 47 0 obj <> Parameters are typical values. <> x�3R��2�35W(�2�300P@&�ҹ endobj /Contents 24 0 R>> <> metal 1 (VDD) oxide n+ n-tub substrate. endobj �ʁt�1H��@aL*9�K?$��T�%_!�+�� �� <> endobj endobj Please enter the OTP sent to your mobile number: Post an enquiry and get instant responses from qualified and experienced tutors. IC Fabrication Process 1. /Contents 30 0 R>>

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